- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
69,560
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 250V 30A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N)IS | 90W (Tc) | N-Channel | - | 250V | 30A (Ta) | 68 mOhm @ 15A, 10V | 3.5V @ 1mA | 132nC @ 10V | 5400pF @ 10V | 10V | ±20V | ||
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GET PRICE |
42,380
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 250V 30A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 150W (Tc) | N-Channel | - | 250V | 30A (Ta) | 68 mOhm @ 15A, 10V | 3.5V @ 1mA | 132nC @ 10V | 5400pF @ 10V | 10V | ±20V | ||
|
|
GET PRICE |
17,160
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 90A DPAK | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 157W (Tc) | N-Channel | - | 60V | 90A (Ta) | 3.3 mOhm @ 45A, 10V | 2.5V @ 500µA | 81nC @ 10V | 5400pF @ 10V | 4.5V, 10V | ±20V | ||
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69,840
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 90A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 157W (Tc) | N-Channel | - | 60V | 90A (Ta) | 3.3 mOhm @ 45A, 10V | 2.5V @ 500µA | 81nC @ 10V | 5400pF @ 10V | 4.5V, 10V | ±20V | |||
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|
55,400
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 90A DPAK | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 157W (Tc) | N-Channel | - | 60V | 90A (Ta) | 3.3 mOhm @ 45A, 10V | 2.5V @ 500µA | 81nC @ 10V | 5400pF @ 10V | 4.5V, 10V | ±20V |
