- Part Status :
- Packaging :
7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
36,100
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|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | 4.5V, 10V | ±20V | ||
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GET PRICE |
75,480
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|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | 4.5V, 10V | ±20V | ||
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GET PRICE |
65,200
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|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | 4.5V, 10V | ±20V | ||
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GET PRICE |
26,580
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | 4.5V, 10V | ±20V | ||
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GET PRICE |
68,000
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | 4.5V, 10V | ±20V | ||
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77,860
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | 4.5V, 10V | ±20V | |||
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23,760
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | 4.5V, 10V | ±20V |
