Power Dissipation (Max) :
Drive Voltage (Max Rds On, Min Rds On) :
5 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
49,680
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Infineon Technologies MOSFET N-CH 30V 19A 8-SOIC - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TA) Surface Mount - - 2.5W N-Channel - 30V 19A (Ta) 4.5 mOhm @ 19A, 10V 2.25V @ 250µA 44nC @ 4.5V 3710pF @ 15V 10V ±20V
IRF7834PBF
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RFQ
15,360
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Infineon Technologies MOSFET N-CH 30V 19A 8-SOIC HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 19A (Ta) 4.5 mOhm @ 19A, 10V 2.25V @ 250µA 44nC @ 4.5V 3710pF @ 15V 4.5V, 10V ±20V
IRF7834TR
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RFQ
15,260
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Infineon Technologies MOSFET N-CH 30V 19A 8-SOIC HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 19A (Ta) 4.5 mOhm @ 19A, 10V 2.25V @ 250µA 44nC @ 4.5V 3710pF @ 15V 4.5V, 10V ±20V
IRF7834
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RFQ
30,760
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Infineon Technologies MOSFET N-CH 30V 19A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 19A (Ta) 4.5 mOhm @ 19A, 10V 2.25V @ 250µA 44nC @ 4.5V 3710pF @ 15V 4.5V, 10V ±20V
IRF7834TRPBF
Per Unit
$0.34
RFQ
36,400
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Infineon Technologies MOSFET N-CH 30V 19A 8-SOIC HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 19A (Ta) 4.5 mOhm @ 19A, 10V 2.25V @ 250µA 44nC @ 4.5V 3710pF @ 15V 4.5V, 10V ±20V
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