- Manufacture :
- Part Status :
- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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42,700
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|
ON Semiconductor | MOSFET N-CH 50V 35A ATPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | ATPAK (2 leads+tab) | ATPAK | 40W (Tc) | N-Channel | 50V | 35A (Ta) | 23 mOhm @ 18A, 4.5V | - | 30nC @ 4.5V | 2700pF @ 20V | 1.8V, 4.5V | ±10V | ||
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52,640
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | - | MOSFET (Metal Oxide) | 175°C | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.8W (Ta), 81W (Tc) | N-Channel | 40V | 87A (Ta), 49A (Tc) | 6 mOhm @ 24.5A, 10V | 2.4V @ 200µA | 30nC @ 10V | 2700pF @ 20V | 4.5V, 10V | ±20V |
