Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FDAF62N28
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RFQ
74,160
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ON Semiconductor MOSFET N-CH 280V 36A TO-3PF UniFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole SC-94 TO-3PF 165W (Tc) N-Channel - 280V 36A (Tc) 51 mOhm @ 18A, 10V 5V @ 250µA 100nC @ 10V 4630pF @ 25V 10V ±30V
FDA62N28
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RFQ
47,100
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ON Semiconductor MOSFET N-CH 280V 62A TO-3P UniFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 500W (Tc) N-Channel - 280V 62A (Tc) 51 mOhm @ 31A, 10V 5V @ 250µA 100nC @ 10V 4630pF @ 25V 10V ±30V
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