4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SPP10N10
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RFQ
31,600
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Infineon Technologies MOSFET N-CH 100V 10.3A TO-220 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 50W (Tc) N-Channel - 100V 10.3A (Tc) 170 mOhm @ 7.8A, 10V 4V @ 21µA 19.4nC @ 10V 426pF @ 25V 10V ±20V
SPI10N10
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RFQ
65,100
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Infineon Technologies MOSFET N-CH 100V 10.3A I2PAK SIPMOS® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 50W (Tc) N-Channel - 100V 10.3A (Tc) 170 mOhm @ 7.8A, 10V 4V @ 21µA 19.4nC @ 10V 426pF @ 25V 10V ±20V
SPB10N10 G
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RFQ
60,980
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Infineon Technologies MOSFET N-CH 100V 10.3A D2PAK SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 50W (Tc) N-Channel - 100V 10.3A (Tc) 170 mOhm @ 7.8A, 10V 4V @ 21µA 19.4nC @ 10V 426pF @ 25V 10V ±20V
SPB10N10
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RFQ
16,260
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Infineon Technologies MOSFET N-CH 100V 10.3A D2PAK SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 50W (Tc) N-Channel - 100V 10.3A (Tc) 170 mOhm @ 7.8A, 10V 4V @ 21µA 19.4nC @ 10V 426pF @ 25V 10V ±20V
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