- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
62,840
One step to sell excess stocks.Or submit Qty to get quotes
|
NXP USA Inc. | MOSFET N-CH 200V 14.4A 8HVSON | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-HVSON (6x5) | 62.5W (Tc) | N-Channel | - | 200V | 14.4A (Tc) | 130 mOhm @ 12A, 10V | 4V @ 1mA | 26nC @ 10V | 1230pF @ 25V | 5V, 10V | ±20V | ||
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|
GET PRICE |
34,820
One step to sell excess stocks.Or submit Qty to get quotes
|
NXP USA Inc. | MOSFET N-CH 200V 4A SOT96-1 | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 6.25W (Tc) | N-Channel | - | 200V | 4A (Tc) | 130 mOhm @ 4A, 10V | 4V @ 1mA | 26nC @ 10V | 1230pF @ 25V | 5V, 10V | ±20V |
