- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
46,300
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 5A TO220SIS | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | 500V | 5A (Ta) | 1.7 Ohm @ 2.5A, 10V | 4V @ 1mA | 16nC @ 10V | 550pF @ 25V | 10V | ±30V | ||
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45,840
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 5A TO220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | 500V | 5A (Ta) | 1.5 Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | 10V | ±30V | |||
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GET PRICE |
42,040
One step to sell excess stocks.Or submit Qty to get quotes
|
Rohm Semiconductor | MOSFET N-CH 500V 5A TO-220FM | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 35W (Tc) | N-Channel | 500V | 5A (Ta) | 1.5 Ohm @ 2.5A, 10V | 4V @ 1mA | 16nC @ 10V | 500pF @ 25V | 10V | ±30V |
