10 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PHP14NQ20T,127
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RFQ
58,760
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NXP USA Inc. MOSFET N-CH 200V 14A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel 200V 14A (Tc) 230 mOhm @ 7A, 10V 4V @ 1mA 38nC @ 10V 1500pF @ 25V 10V ±20V
2SK2866(F)
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RFQ
32,880
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 10A TO-220AB - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel 600V 10A (Ta) 750 mOhm @ 5A, 10V 4V @ 1mA 45nC @ 10V 2040pF @ 10V 10V ±30V
BUZ30A E3045A
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RFQ
24,380
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Infineon Technologies MOSFET N-CH 200V 21A TO-263 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 125W (Tc) N-Channel 200V 21A (Tc) 130 mOhm @ 13.5A, 10V 4V @ 1mA - 1900pF @ 25V 10V ±20V
BUZ30A
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RFQ
78,460
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Infineon Technologies MOSFET N-CH 200V 21A TO-220AB SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 125W (Tc) N-Channel 200V 21A (Tc) 130 mOhm @ 13.5A, 10V 4V @ 1mA - 1900pF @ 25V 10V ±20V
BUZ30AH3045AATMA1
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RFQ
35,100
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Infineon Technologies MOSFET N-CH 200V 21A TO-263 SIPMOS® Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 125W (Tc) N-Channel 200V 21A (Tc) 130 mOhm @ 13.5A, 10V 4V @ 1mA - 1900pF @ 25V 10V ±20V
BUZ30AH3045AATMA1
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RFQ
66,320
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Infineon Technologies MOSFET N-CH 200V 21A TO-263 SIPMOS® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 125W (Tc) N-Channel 200V 21A (Tc) 130 mOhm @ 13.5A, 10V 4V @ 1mA - 1900pF @ 25V 10V ±20V
BUZ30AH3045AATMA1
Per Unit
$0.54
RFQ
78,940
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Infineon Technologies MOSFET N-CH 200V 21A TO-263 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 125W (Tc) N-Channel 200V 21A (Tc) 130 mOhm @ 13.5A, 10V 4V @ 1mA - 1900pF @ 25V 10V ±20V
BUK7618-55,118
Per Unit
$0.32
RFQ
71,520
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Nexperia USA Inc. MOSFET N-CH 55V 57A D2PAK TrenchMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 125W (Tc) N-Channel 55V 57A (Tc) 18 mOhm @ 25A, 10V 4V @ 1mA - 2000pF @ 25V 10V ±16V
2SK2719(F)
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RFQ
69,560
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Toshiba Semiconductor and Storage MOSFET N-CH 900V 3A TO-3PN - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 125W (Tc) N-Channel 900V 3A (Ta) 4.3 Ohm @ 1.5A, 10V 4V @ 1mA 25nC @ 10V 750pF @ 25V 10V ±30V
BUZ30AHXKSA1
Per Unit
$1.15
RFQ
19,940
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Infineon Technologies MOSFET N-CH 200V 21A TO220-3 SIPMOS® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 125W (Tc) N-Channel 200V 21A (Tc) 130 mOhm @ 13.5A, 10V 4V @ 1mA - 1900pF @ 25V 10V ±20V
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