- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
43,860
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|
Infineon Technologies | MOSFET P-CH 100V 1A SOT-223 | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | 100V | 1A (Tc) | 800 mOhm @ 1A, 10V | 1V @ 380µA | 16.5nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | ||
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GET PRICE |
56,900
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|
ON Semiconductor | MOSFET N-CH 30V 9.4A DPAK-3 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.38W (Ta), 26.3W (Tc) | N-Channel | 30V | 9.4A (Ta), 41A (Tc) | 9 mOhm @ 30A, 10V | 2.5V @ 250µA | 16.5nC @ 10V | 837pF @ 15V | 4.5V, 10V | ±20V | ||
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GET PRICE |
74,580
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|
Vishay Siliconix | MOSFET P-CH 100V 10.8A 1212-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 27.8W (Tc) | P-Channel | 100V | 10.8A (Tc) | 132 mOhm @ 3.8A, 10V | 2.6V @ 250µA | 16.5nC @ 10V | 515pF @ 50V | 4.5V, 10V | ±20V | ||
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37,180
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|
Vishay Siliconix | MOSFET P-CH 100V 10.8A 1212-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 27.8W (Tc) | P-Channel | 100V | 10.8A (Tc) | 132 mOhm @ 3.8A, 10V | 2.6V @ 250µA | 16.5nC @ 10V | 515pF @ 50V | 4.5V, 10V | ±20V | |||
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|
|
76,000
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|
Vishay Siliconix | MOSFET P-CH 100V 10.8A 1212-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 27.8W (Tc) | P-Channel | 100V | 10.8A (Tc) | 132 mOhm @ 3.8A, 10V | 2.6V @ 250µA | 16.5nC @ 10V | 515pF @ 50V | 4.5V, 10V | ±20V | |||
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|
|
GET PRICE |
24,060
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET P-CH 100V 1A SOT-223 | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | 100V | 1A (Tc) | 800 mOhm @ 1A, 10V | 1V @ 380µA | 16.5nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | ||
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54,760
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|
Infineon Technologies | MOSFET P-CH 100V 1A SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | 100V | 1A (Tc) | 800 mOhm @ 1A, 10V | 1V @ 380µA | 16.5nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | |||
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|
|
35,020
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|
Infineon Technologies | MOSFET P-CH 100V 1A SOT-223 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | 100V | 1A (Tc) | 800 mOhm @ 1A, 10V | 1V @ 380µA | 16.5nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | |||
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|
79,840
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|
ON Semiconductor | MOSFET N-CH 30V 9.4A IPAK TRIMME | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 1.38W (Ta), 26.3W (Tc) | N-Channel | 30V | 9.4A (Ta), 41A (Tc) | 9 mOhm @ 30A, 10V | 2.5V @ 250µA | 16.5nC @ 10V | 837pF @ 15V | 4.5V, 10V | ±20V |
