Supplier Device Package :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PSMN005-55P,127
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RFQ
17,340
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NXP USA Inc. MOSFET N-CH 55V 75A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 230W (Tc) N-Channel - 55V 75A (Tc) 5.8 mOhm @ 25A, 10V 2V @ 1mA 103nC @ 5V 6500pF @ 25V 4.5V, 10V ±15V
PSMN004-36B,118
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RFQ
18,040
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NXP USA Inc. MOSFET N-CH 36V 75A D2PAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 230W (Tc) N-Channel - 36V 75A (Tc) 4 mOhm @ 25A, 10V 2V @ 1mA 97nC @ 5V 6000pF @ 20V 4.5V, 10V ±15V
PSMN005-55B,118
GET PRICE
RFQ
35,940
One step to sell excess stocks.Or submit Qty to get quotes
NXP USA Inc. MOSFET N-CH 55V 75A D2PAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 230W (Tc) N-Channel - 55V 75A (Tc) 5.8 mOhm @ 25A, 10V 2V @ 1mA 103nC @ 5V 6500pF @ 25V 4.5V, 10V ±15V
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