Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BSH112,235
GET PRICE
RFQ
66,920
One step to sell excess stocks.Or submit Qty to get quotes
NXP USA Inc. MOSFET N-CH 60V 300MA SOT-23 TrenchMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 830mW (Tc) N-Channel 60V 300mA (Ta) 5 Ohm @ 500mA, 10V 2V @ 1mA - 40pF @ 10V 4.5V, 10V ±15V
2N7002K,215
GET PRICE
RFQ
76,780
One step to sell excess stocks.Or submit Qty to get quotes
NXP USA Inc. MOSFET N-CH 60V 340MA SOT23 TrenchMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 830mW (Ta) N-Channel 60V 340mA (Ta) 3.9 Ohm @ 500mA, 10V 2V @ 1mA - 40pF @ 10V 4.5V, 10V ±15V
Page 1 / 1