Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PHB129NQ04LT,118
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RFQ
39,100
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NXP USA Inc. MOSFET N-CH 40V 75A D2PAK TrenchMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 200W (Tc) N-Channel - 40V 75A (Tc) 5 mOhm @ 25A, 10V 2V @ 1mA 44.2nC @ 5V 3965pF @ 25V 4.5V, 10V ±15V
BUK9607-30B,118
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RFQ
54,960
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Nexperia USA Inc. MOSFET N-CH 30V 75A D2PAK Automotive, AEC-Q101, TrenchMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 157W (Tc) N-Channel - 30V 75A (Tc) 5 mOhm @ 25A, 10V 2V @ 1mA 32nC @ 5V 3373pF @ 25V 4.5V, 10V ±15V
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