Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SI2333-TP
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RFQ
13,520
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Micro Commercial Co P-CHANNEL MOSFET, SOT-23 PACKAGE - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 350mW (Tc) P-Channel 12V 6A (Tc) 150 mOhm @ 500mA, 1.5V 1V @ 250µA 2nC @ 4.5V 1275pF @ 6V 4.5V ±8V
STR2N2VH5
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RFQ
76,300
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STMicroelectronics MOSFET N-CH 20V 2.3A SOT-23 STripFET™ V Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 350mW (Tc) N-Channel 20V - 30 mOhm @ 2A, 4.5V 700mV @ 250µA (Min) 4.6nC @ 4.5V 367pF @ 16V 2.5V, 4.5V ±8V
RYC002N05T316
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RFQ
73,600
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Rohm Semiconductor MOSFET N-CHANNEL 50V 200MA SST3 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SST3 350mW (Tc) N-Channel 50V 200mA (Ta) 2.2 Ohm @ 200mA, 4.5V 800mV @ 1mA - 26pF @ 10V 4.5V ±8V
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