Supplier Device Package :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SI7411DN-T1-E3
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RFQ
40,440
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Vishay Siliconix MOSFET P-CH 20V 7.5A 1212-8 TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 1.5W (Ta) P-Channel 20V 7.5A (Ta) 19 mOhm @ 11.4A, 4.5V 1V @ 300µA 41nC @ 4.5V - 1.8V, 4.5V ±8V
BSL802SNL6327HTSA1
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RFQ
12,780
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Infineon Technologies MOSFET N-CH 20V 7.5A TSOP6 OptiMOS™ Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 PG-TSOP6-6 2W (Ta) N-Channel 20V 7.5A (Ta) 22 mOhm @ 7.5A, 2.5V 750mV @ 30µA 4.7nC @ 2.5V 1347pF @ 10V 1.8V, 2.5V ±8V
SI7411DN-T1-GE3
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RFQ
56,040
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET P-CH 20V 7.5A 1212-8 TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 1.5W (Ta) P-Channel 20V 7.5A (Ta) 19 mOhm @ 11.4A, 4.5V 1V @ 300µA 41nC @ 4.5V - 1.8V, 4.5V ±8V
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