Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SI2365EDS-T1-GE3
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RFQ
79,020
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Vishay Siliconix MOSFET P-CH 20V 5.9A TO-236 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236 1W (Ta), 1.7W (Tc) P-Channel 20V 5.9A (Tc) 32 mOhm @ 4A, 4.5V 1V @ 250µA 36nC @ 8V - 1.8V, 4.5V ±8V
DMP1045UFY4-7
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RFQ
41,740
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Diodes Incorporated MOSFET P-CH 12V 5.5A DFN2015-3 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XFDFN - 700mW (Ta) P-Channel 12V 5.5A (Ta) 32 mOhm @ 4A, 4.5V 1V @ 250µA 23.7nC @ 8V 1291pF @ 10V 1.8V, 4.5V ±8V
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