Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FDG410NZ
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RFQ
74,460
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ON Semiconductor MOSFET N-CH 20V 2.2A SC70-6 PowerTrench® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 SC-70-6 420mW (Ta) N-Channel 20V 2.2A (Ta) 70 mOhm @ 2.2A, 4.5V 1V @ 250µA 7.2nC @ 4.5V 535pF @ 10V 1.5V, 4.5V ±8V
PHK04P02T,518
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RFQ
33,920
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Nexperia USA Inc. MOSFET P-CH 16V 4.66A 8-SOIC - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 5W (Tc) P-Channel 16V 4.66A (Tc) 120 mOhm @ 1A, 4.5V 600mV @ 1mA 7.2nC @ 4.5V 528pF @ 12.8V 2.5V, 10V ±8V
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