Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BS270-D74Z
Per Unit
$0.04
RFQ
34,980
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 60V 400MA TO-92 - Active Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 625mW (Ta) N-Channel 60V 400mA (Ta) 2 Ohm @ 500mA, 10V 2.5V @ 250µA - 50pF @ 25V 4.5V, 10V ±20V
TSM2N7000KCT A3G
Per Unit
$0.03
RFQ
70,660
One step to sell excess stocks.Or submit Qty to get quotes
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 60V 300MA TO92 - Active Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92 400mW (Ta) N-Channel 60V 300mA (Ta) 5 Ohm @ 100mA, 10V 2.5V @ 250µA 0.4nC @ 4.5V 7.32pF @ 25V 5V, 10V ±20V
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