- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
6 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
69,200
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 3.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 3.5A (Ta) | 1.9 Ohm @ 1.8A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | ||
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GET PRICE |
79,540
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 900V 2.5A TO-220SIS | π-MOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 900V | 2.5A (Ta) | 6.4 Ohm @ 1.5A, 10V | 4V @ 1mA | 12nC @ 10V | 470pF @ 25V | 10V | ±30V | ||
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GET PRICE |
67,120
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 4A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 4A (Ta) | 1.7 Ohm @ 2A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | ||
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50,760
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 7A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 500V | 7A (Ta) | 1.22 Ohm @ 3.5A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | |||
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37,280
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 525V 6A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 525V | 6A (Ta) | 1.3 Ohm @ 3A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | |||
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21,300
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 5.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 550V | 5.5A (Ta) | 1.48 Ohm @ 2.8A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V |