- Part Status :
- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.15 Ohm @ 2.5A, 10V (1)
- 1.22 Ohm @ 3.5A, 10V (1)
- 1.3 Ohm @ 3A, 10V (1)
- 1.48 Ohm @ 2.8A, 10V (1)
- 1.5 Ohm @ 2.25A, 10V (1)
- 1.7 Ohm @ 2A, 10V (1)
- 1.75 Ohm @ 2.1A, 10V (1)
- 1.9 Ohm @ 1.8A, 10V (1)
- 2 Ohm @ 1.95A, 10V (1)
- 2.5 Ohm @ 2A, 10V (1)
- 2.7 Ohm @ 1.5A, 10V (2)
- 4.5 Ohm @ 1A, 10V (1)
- 4.7 Ohm @ 1A, 10V (1)
- 530 mOhm @ 4A, 10V (1)
- 6.4 Ohm @ 1.5A, 10V (1)
- 600 mOhm @ 2.4A, 10V (1)
- 780 mOhm @ 2.5A, 10V (1)
- 900 mOhm @ 3.5A, 10V (1)
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
19 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
69,200
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 3.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 3.5A (Ta) | 1.9 Ohm @ 1.8A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | ||
|
|
GET PRICE |
24,720
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|
Global Power Technologies Group | MOSFET N-CH 600V 4A TO220F | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 30.4W (Tc) | N-Channel | - | 600V | 4A (Tc) | 2.5 Ohm @ 2A, 10V | 5V @ 250µA | 12nC @ 10V | 545pF @ 25V | 10V | ±30V | ||
|
|
GET PRICE |
79,540
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 900V 2.5A TO-220SIS | π-MOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 900V | 2.5A (Ta) | 6.4 Ohm @ 1.5A, 10V | 4V @ 1mA | 12nC @ 10V | 470pF @ 25V | 10V | ±30V | ||
|
|
GET PRICE |
56,260
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|
STMicroelectronics | MOSFET N-CH 500V 5A TO-220FP | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 20W (Tc) | N-Channel | - | 500V | 5A (Tc) | 780 mOhm @ 2.5A, 10V | 4V @ 250µA | 12nC @ 10V | 400pF @ 50V | 10V | ±25V | ||
|
|
GET PRICE |
68,160
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|
STMicroelectronics | MOSFET N-CH 500V 3A TO-220FP | SuperMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 20W (Tc) | N-Channel | - | 500V | 3A (Tc) | 2.7 Ohm @ 1.5A, 10V | 4.5V @ 50µA | 12nC @ 10V | 310pF @ 25V | 10V | ±30V | ||
|
|
GET PRICE |
67,120
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 4A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 4A (Ta) | 1.7 Ohm @ 2A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | ||
|
|
20,760
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|
STMicroelectronics | MOSFET N-CH 800V 7A TO-220FP | MDmesh™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 25W (Tc) | N-Channel | - | 800V | 7A (Tc) | 900 mOhm @ 3.5A, 10V | 5V @ 100µA | 12nC @ 10V | 340pF @ 100V | 10V | ±30V | |||
|
|
40,520
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|
STMicroelectronics | MOSFET N-CH 500V 8A TO220FP | MDmesh™ II Plus | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 25W (Tc) | N-Channel | - | 500V | 8A (Tc) | 530 mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | 395pF @ 100V | 10V | ±25V | |||
|
|
70,820
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|
STMicroelectronics | MOSFET N-CH 800V 5A TO-220FP | MDmesh™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 25W (Tc) | N-Channel | - | 800V | 5A (Tc) | 1.15 Ohm @ 2.5A, 10V | 5V @ 100µA | 12nC @ 10V | 270pF @ 100V | 10V | ±30V | |||
|
|
60,560
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|
STMicroelectronics | MOSFET N CH 600V 2A TO-220FP | SuperMESH3™ | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 20W (Tc) | N-Channel | - | 600V | 2A (Tc) | 4.5 Ohm @ 1A, 10V | 4.5V @ 50µA | 12nC @ 10V | 235pF @ 50V | 10V | ±30V | |||
|
|
GET PRICE |
37,660
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|
STMicroelectronics | MOSFET N-CH 500V 3A TO-220FP | SuperMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 20W (Tc) | N-Channel | - | 500V | 3A (Tc) | 2.7 Ohm @ 1.5A, 10V | 4.5V @ 50µA | 12nC @ 10V | 310pF @ 25V | 10V | ±30V | ||
|
|
36,660
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|
ON Semiconductor | MOSFET N-CH 500V 3.9A TO-220F | UniFET-II™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 30W (Tc) | N-Channel | - | 500V | 3.9A (Tc) | 2 Ohm @ 1.95A, 10V | 5V @ 250µA | 12nC @ 10V | 485pF @ 25V | 10V | ±25V | |||
|
|
23,400
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|
ON Semiconductor | MOSFET N-CH 500V 4.2A TO-220F | UniFET-II™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 30W (Tc) | N-Channel | - | 500V | 4.2A (Tc) | 1.75 Ohm @ 2.1A, 10V | 5V @ 250µA | 12nC @ 10V | 485pF @ 25V | 10V | ±25V | |||
|
|
70,860
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|
Infineon Technologies | MOSFET N-CH 600V 4.9A TO220-FP | CoolMOS™ P6 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO-220-FP | 28W (Tc) | N-Channel | - | 600V | 4.9A (Tc) | 600 mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12nC @ 10V | 557pF @ 100V | 10V | ±20V | |||
|
|
50,760
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 7A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 500V | 7A (Ta) | 1.22 Ohm @ 3.5A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | |||
|
|
37,280
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 525V 6A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 525V | 6A (Ta) | 1.3 Ohm @ 3A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | |||
|
|
21,300
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 5.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 550V | 5.5A (Ta) | 1.48 Ohm @ 2.8A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | |||
|
|
30,640
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|
ON Semiconductor | MOSFET N-CH 600V 2A TO-220F | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 23W (Tc) | N-Channel | - | 600V | 2A (Tc) | 4.7 Ohm @ 1A, 10V | 4V @ 250µA | 12nC @ 10V | 235pF @ 25V | 10V | ±30V | |||
|
|
29,820
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|
ON Semiconductor | MOSFET N-CH 500V 4.5A TO220F | UniFET-II™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 30W (Tc) | N-Channel | - | 500V | 4.5A (Tc) | 1.5 Ohm @ 2.25A, 10V | 5V @ 250µA | 12nC @ 10V | 440pF @ 25V | 10V | ±25V |