- Manufacture :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
54,740
One step to sell excess stocks.Or submit Qty to get quotes
|
Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 165W (Tc) | N-Channel | 700V | 49A (Tc) | 70 mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125nC @ 20V | - | 20V | +25V, -10V | ||
|
|
25,480
One step to sell excess stocks.Or submit Qty to get quotes
|
Rohm Semiconductor | MOSFET N-CH 650V 29A TO-220AB | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 165W (Tc) | N-Channel | 650V | 29A (Tc) | 156 mOhm @ 10A, 18V | 4V @ 3.3mA | 61nC @ 18V | 1200pF @ 500V | 18V | +22V, -6V | |||
|
|
50,900
One step to sell excess stocks.Or submit Qty to get quotes
|
Rohm Semiconductor | MOSFET NCH 1.2KV 31A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 165W (Tc) | N-Channel | 1200V | 31A (Tc) | 104 mOhm @ 10A, 18V | 5.6V @ 5mA | 60nC @ 18V | 785pF @ 800V | 18V | +22V, -4V | |||
|
|
|
18,880
One step to sell excess stocks.Or submit Qty to get quotes
|
Rohm Semiconductor | MOSFET NCH 650V 39A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 165W (Tc) | N-Channel | 650V | 39A (Tc) | 78 mOhm @ 13A, 18V | 5.6V @ 6.67mA | 58nC @ 18V | 852pF @ 500V | 18V | +22V, -4V | |||
|
|
|
37,440
One step to sell excess stocks.Or submit Qty to get quotes
|
Rohm Semiconductor | MOSFET N-CH 1200V 22A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | 1200V | 22A (Tc) | 208 mOhm @ 7A, 18V | 4V @ 2.5mA | 62nC @ 18V | 1200pF @ 800V | 18V | +22V, -6V |
