- Series :
- Part Status :
- Technology :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.3 Ohm @ 4.5A, 10V (2)
- 100 mOhm @ 20A, 20V (1)
- 104 mOhm @ 10A, 18V (1)
- 155 mOhm @ 10A, 10V (6)
- 156 mOhm @ 10A, 18V (1)
- 175 mOhm @ 10A, 10V (1)
- 200 mOhm @ 8.7A, 10V (2)
- 208 mOhm @ 7A, 18V (1)
- 4 mOhm @ 20A, 10V (2)
- 4.5 mOhm @ 69A, 10V (3)
- 4.8 mOhm @ 69A, 10V (2)
- 450 mOhm @ 5.8A, 10V (1)
- 5.1 mOhm @ 63A, 10V (1)
- 5.4 mOhm @ 63A, 10V (2)
- 51 mOhm @ 18A, 10V (1)
- 650 mOhm @ 6A, 10V (4)
- 70 mOhm @ 32.5A, 20V (1)
- 700 mOhm @ 6A, 10V (3)
- 78 mOhm @ 13A, 18V (1)
- 800 mOhm @ 5A, 10V (3)
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
- Applied Filters :
39 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
54,740
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|
Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 165W (Tc) | N-Channel | - | 700V | 49A (Tc) | 70 mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125nC @ 20V | - | 20V | +25V, -10V | ||
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30,700
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|
Infineon Technologies | MOSFET N-CH 55V 80A TO263-3 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 165W (Tc) | N-Channel | - | 55V | 80A (Tc) | 5.1 mOhm @ 63A, 10V | 4V @ 110µA | 240nC @ 10V | 10760pF @ 25V | 10V | ±20V | ||
|
|
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74,160
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|
ON Semiconductor | MOSFET N-CH 280V 36A TO-3PF | UniFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | SC-94 | TO-3PF | 165W (Tc) | N-Channel | - | 280V | 36A (Tc) | 51 mOhm @ 18A, 10V | 5V @ 250µA | 100nC @ 10V | 4630pF @ 25V | 10V | ±30V | ||
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|
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13,040
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|
Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 165W (Tc) | N-Channel | - | 55V | 80A (Tc) | 4.8 mOhm @ 69A, 10V | 2.2V @ 115µA | 273nC @ 10V | 13060pF @ 25V | 5V, 10V | ±16V | ||
|
|
GET PRICE |
71,000
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|
Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 165W (Tc) | N-Channel | - | 55V | 80A (Tc) | 5.4 mOhm @ 63A, 10V | 4V @ 110µA | 240nC @ 10V | 10760pF @ 25V | 10V | ±20V | ||
|
|
GET PRICE |
62,500
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|
ON Semiconductor | MOSFET N-CH 500V 10A D2PAK | FRFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | 165W (Tc) | N-Channel | - | 500V | 10A (Tc) | 800 mOhm @ 5A, 10V | 5V @ 250µA | 30nC @ 10V | 1395pF @ 25V | 10V | ±30V | ||
|
|
GET PRICE |
65,600
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|
ON Semiconductor | MOSFET N-CH 500V 10A D2PAK | FRFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | 165W (Tc) | N-Channel | - | 500V | 10A (Tc) | 800 mOhm @ 5A, 10V | 5V @ 250µA | 30nC @ 10V | 1395pF @ 25V | 10V | ±30V | ||
|
|
GET PRICE |
75,780
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|
ON Semiconductor | MOSFET N-CH 500V 10A D2PAK | FRFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | 165W (Tc) | N-Channel | - | 500V | 10A (Tc) | 800 mOhm @ 5A, 10V | 5V @ 250µA | 30nC @ 10V | 1395pF @ 25V | 10V | ±30V | ||
|
|
GET PRICE |
38,200
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|
Infineon Technologies | MOSFET N-CH 55V 80A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 165W (Tc) | N-Channel | - | 55V | 80A (Tc) | 4.8 mOhm @ 69A, 10V | 2.2V @ 115µA | 273nC @ 10V | 13060pF @ 25V | 5V, 10V | ±16V | ||
|
|
GET PRICE |
61,160
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|
Infineon Technologies | MOSFET N-CH 55V 80A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 165W (Tc) | N-Channel | - | 55V | 80A (Tc) | 5.4 mOhm @ 63A, 10V | 4V @ 110µA | 240nC @ 10V | 10760pF @ 25V | 10V | ±20V | ||
|
|
GET PRICE |
33,420
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|
Infineon Technologies | MOSFET N-CH 55V 80A TO-263 | OptiMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 165W (Tc) | N-Channel | - | 55V | 80A (Tc) | 4.5 mOhm @ 69A, 10V | 2.2V @ 115µA | 273nC @ 10V | 13060pF @ 25V | 5V, 10V | ±16V | ||
|
|
GET PRICE |
65,780
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|
Infineon Technologies | MOSFET N-CH 55V 80A TO-263 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 165W (Tc) | N-Channel | - | 55V | 80A (Tc) | 4.5 mOhm @ 69A, 10V | 2.2V @ 115µA | 273nC @ 10V | 13060pF @ 25V | 5V, 10V | ±16V | ||
|
|
GET PRICE |
51,980
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|
Infineon Technologies | MOSFET N-CH 55V 80A TO-263 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 165W (Tc) | N-Channel | - | 55V | 80A (Tc) | 4.5 mOhm @ 69A, 10V | 2.2V @ 115µA | 273nC @ 10V | 13060pF @ 25V | 5V, 10V | ±16V | ||
|
|
63,760
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
|
21,240
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|
Diodes Incorporated | MOSFET N-CH 40V 150A TO220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 165W (Tc) | N-Channel | - | 40V | 150A (Tc) | 4 mOhm @ 20A, 10V | 3V @ 250µA | 48nC @ 10V | 2846pF @ 20V | 10V | 20V | |||
|
|
75,480
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|
Diodes Incorporated | MOSFET N-CH 650V 9A TO220AB | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 165W (Tc) | N-Channel | - | 650V | 9A (Tc) | 1.3 Ohm @ 4.5A, 10V | 5V @ 250µA | 39nC @ 10V | 2310pF @ 25V | 10V | ±30V | |||
|
|
35,920
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
|
65,460
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|
Diodes Incorporated | MOSFET N-CH 40V 150A TO220AB | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 165W (Tc) | N-Channel | - | 40V | 150A (Tc) | 4 mOhm @ 20A, 10V | 3V @ 250µA | 48nC @ 10V | 2846pF @ 20V | 10V | 20V | |||
|
|
30,280
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|
Diodes Incorporated | MOSFET N-CH 650V 9A TO220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 165W (Tc) | N-Channel | - | 650V | 9A (Tc) | 1.3 Ohm @ 4.5A, 10V | 5V @ 250µA | 39nC @ 10V | 2310pF @ 25V | 10V | ±30V | |||
|
|
GET PRICE |
32,280
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|
ON Semiconductor | MOSFET N-CH 500V 11.5A D2PAK | UniFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | 165W (Tc) | N-Channel | - | 500V | 11.5A (Tc) | 700 mOhm @ 6A, 10V | 5V @ 250µA | 30nC @ 10V | 1395pF @ 25V | 10V | ±30V | ||
|
|
30,580
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|
ON Semiconductor | MOSFET N-CH 500V 11.5A D2PAK | UniFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | 165W (Tc) | N-Channel | - | 500V | 11.5A (Tc) | 700 mOhm @ 6A, 10V | 5V @ 250µA | 30nC @ 10V | 1395pF @ 25V | 10V | ±30V | |||
|
|
76,240
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|
ON Semiconductor | MOSFET N-CH 500V 11.5A D2PAK | UniFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | 165W (Tc) | N-Channel | - | 500V | 11.5A (Tc) | 700 mOhm @ 6A, 10V | 5V @ 250µA | 30nC @ 10V | 1395pF @ 25V | 10V | ±30V | |||
|
|
25,480
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|
Rohm Semiconductor | MOSFET N-CH 650V 29A TO-220AB | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 165W (Tc) | N-Channel | - | 650V | 29A (Tc) | 156 mOhm @ 10A, 18V | 4V @ 3.3mA | 61nC @ 18V | 1200pF @ 500V | 18V | +22V, -6V | |||
|
|
50,900
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|
Rohm Semiconductor | MOSFET NCH 1.2KV 31A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 165W (Tc) | N-Channel | - | 1200V | 31A (Tc) | 104 mOhm @ 10A, 18V | 5.6V @ 5mA | 60nC @ 18V | 785pF @ 800V | 18V | +22V, -4V | |||
|
|
18,880
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|
Rohm Semiconductor | MOSFET NCH 650V 39A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 165W (Tc) | N-Channel | - | 650V | 39A (Tc) | 78 mOhm @ 13A, 18V | 5.6V @ 6.67mA | 58nC @ 18V | 852pF @ 500V | 18V | +22V, -4V | |||
|
|
28,180
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|
ON Semiconductor | MOSFET N-CH 500V 11.5A TO-220 | UniFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 165W (Tc) | N-Channel | - | 500V | 11.5A (Tc) | 650 mOhm @ 6A, 10V | 5V @ 250µA | 30nC @ 10V | 1315pF @ 25V | 10V | ±30V | |||
|
|
67,320
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|
Microsemi Corporation | MOSFET N-CH 1200V 32A SOT227 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 165W (Tc) | N-Channel | - | 1200V | 32A (Tc) | 100 mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | 20V | +25V, -10V | |||
|
|
16,140
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A I2PAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
|
GET PRICE |
51,760
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|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 20A D2PAK | DTMOSIV | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 165W (Tc) | N-Channel | Super Junction | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | ||
|
|
GET PRICE |
47,240
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|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 20A D2PAK | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 165W (Tc) | N-Channel | Super Junction | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V |