Supplier Device Package :
Power Dissipation (Max) :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STF2LN60K3
Per Unit
$0.63
RFQ
60,560
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N CH 600V 2A TO-220FP SuperMESH3™ Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 20W (Tc) N-Channel - 600V 2A (Tc) 4.5 Ohm @ 1A, 10V 4.5V @ 50µA 12nC @ 10V 235pF @ 50V 10V ±30V
FQPF2N60C
Per Unit
$0.67
RFQ
30,640
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 2A TO-220F QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 23W (Tc) N-Channel - 600V 2A (Tc) 4.7 Ohm @ 1A, 10V 4V @ 250µA 12nC @ 10V 235pF @ 25V 10V ±30V
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