Rds On (Max) @ Id, Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
181 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TSM8N70CI C0G
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RFQ
62,780
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 700V 8A ITO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 40W (Tc) N-Channel - 700V 8A (Tc) 900 mOhm @ 4A, 10V 4V @ 250µA 32nC @ 10V 2006pF @ 25V 10V ±30V
TSM7N65ACI C0G
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RFQ
39,000
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 650V 7A ITO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 40W (Tc) N-Channel - 650V 7A (Tc) 1.45 Ohm @ 3A, 10V 4V @ 250µA 27.8nC @ 10V 1406pF @ 25V 10V ±30V
TSM6NB60CZ C0G
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RFQ
48,520
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 6A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 40W (Tc) N-Channel - 600V 6A (Tc) 1.6 Ohm @ 3A, 10V 4.5V @ 250µA 18.3nC @ 10V 872pF @ 25V 10V ±30V
TSM4NC60CI C0G
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RFQ
41,700
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 4A ITO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 40W (Tc) N-Channel - 600V 4A (Tc) 2.5 Ohm @ 1.3A, 10V 4V @ 250µA 18nC @ 10V 654pF @ 50V 10V ±30V
TK15A60U(STA4,Q,M)
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21,160
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 15A TO-220SIS DTMOSII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel - 600V 15A (Ta) 300 mOhm @ 7.5A, 10V 5V @ 1mA 17nC @ 10V 950pF @ 10V 10V ±30V
TK16A60W5,S4VX
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RFQ
77,200
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Toshiba Semiconductor and Storage MOSFET N CH 600V 15.8A TO-220SIS DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel Super Junction 600V 15.8A (Ta) 190 mOhm @ 7.9A, 10V 3.7V @ 1.5mA 43nC @ 10V 1350pF @ 300V 10V ±30V
SIHF8N50L-E3
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RFQ
58,400
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Vishay Siliconix MOSFET N-CH 500V 8A TO220FP - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 40W (Tc) N-Channel - 500V 8A (Tc) 1 Ohm @ 4A, 10V 5V @ 250µA - 873pF @ 25V 10V ±30V
BUZ73LHXKSA1
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RFQ
69,340
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Infineon Technologies MOSFET N-CH 200V 7A TO220-3 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 40W (Tc) N-Channel - 200V 7A (Tc) 400 mOhm @ 3.5A, 5V 2V @ 1mA - 840pF @ 25V 5V ±20V
BUZ73ALHXKSA1
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RFQ
39,160
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Infineon Technologies MOSFET N-CH 200V 5.5A TO220-3 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 40W (Tc) N-Channel - 200V 5.5A (Tc) 600 mOhm @ 3.5A, 5V 2V @ 1mA - 840pF @ 25V 5V ±20V
BUZ73A H3046
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RFQ
34,980
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Infineon Technologies MOSFET N-CH 200V 5.5A TO220-3 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 40W (Tc) N-Channel - 200V 5.5A (Tc) 600 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V
BUZ73A H
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RFQ
27,900
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Infineon Technologies MOSFET N-CH 200V 5.5A TO220-3 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 40W (Tc) N-Channel - 200V 5.5A (Tc) 600 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V
BUZ73H3046XKSA1
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RFQ
36,280
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Infineon Technologies MOSFET N-CH 200V 5.5A TO220-3 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 40W (Tc) N-Channel - 200V 7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V
BUZ73HXKSA1
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RFQ
22,900
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Infineon Technologies MOSFET N-CH 200V 7A TO220-3 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 40W (Tc) N-Channel - 200V 7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V
FQPF5N60
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RFQ
60,660
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ON Semiconductor MOSFET N-CH 600V 2.8A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 40W (Tc) N-Channel - 600V 2.8A (Tc) 2 Ohm @ 1.4A, 10V 5V @ 250µA 20nC @ 10V 730pF @ 25V 10V ±30V
FQPF18N20V2
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RFQ
36,760
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ON Semiconductor MOSFET N-CH 200V 18A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 40W (Tc) N-Channel - 200V 18A (Tc) 140 mOhm @ 9A, 10V 5V @ 250µA 26nC @ 10V 1080pF @ 25V 10V ±30V
FQPF6N60C
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RFQ
49,160
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ON Semiconductor MOSFET N-CH 600V 5.5A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 40W (Tc) N-Channel - 600V 5.5A (Tc) 2 Ohm @ 2.75A, 10V 4V @ 250µA 20nC @ 10V 810pF @ 25V 10V ±30V
2SK3566(STA4,Q,M)
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RFQ
79,540
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Toshiba Semiconductor and Storage MOSFET N-CH 900V 2.5A TO-220SIS π-MOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel - 900V 2.5A (Ta) 6.4 Ohm @ 1.5A, 10V 4V @ 1mA 12nC @ 10V 470pF @ 25V 10V ±30V
2SK3564(STA4,Q,M)
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RFQ
19,340
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Toshiba Semiconductor and Storage MOSFET N-CH 900V 3A TO-220SIS π-MOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel - 900V 3A (Ta) 4.3 Ohm @ 1.5A, 10V 4V @ 1mA 17nC @ 10V 700pF @ 25V 10V ±30V
RDN120N25FU6
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RFQ
46,020
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Rohm Semiconductor MOSFET N-CH 250V 12A TO-220FN - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FN 40W (Tc) N-Channel - 250V 12A (Ta) 210 mOhm @ 6A, 10V 4V @ 1mA 62nC @ 10V 1224pF @ 10V 10V ±30V
2SK3313(Q)
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RFQ
20,860
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Toshiba Semiconductor and Storage MOSFET N-CH 500V 12A TO220NIS - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220NIS 40W (Tc) N-Channel - 500V 12A (Ta) 620 mOhm @ 6A, 10V 4V @ 1mA 45nC @ 10V 2040pF @ 10V 10V ±30V
2SJ304(F)
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RFQ
68,700
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Toshiba Semiconductor and Storage MOSFET P-CH 60V 14A TO220NIS - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220NIS 40W (Tc) P-Channel - 60V 14A (Ta) 120 mOhm @ 7A, 10V 2V @ 1mA 45nC @ 10V 1200pF @ 10V 4V, 10V ±20V
FQPF18N20V2YDTU
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RFQ
44,500
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ON Semiconductor MOSFET N-CH 200V 18A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Formed Leads TO-220F-3 (Y-Forming) 40W (Tc) N-Channel - 200V 18A (Tc) 140 mOhm @ 9A, 10V 5V @ 250µA 26nC @ 10V 1080pF @ 25V 10V ±30V
IXCP01N90E
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RFQ
23,320
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IXYS MOSFET N-CH 900V 0.25A TO-220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 40W (Tc) N-Channel - 900V 250mA (Tc) 80 Ohm @ 50mA, 10V 5V @ 25µA 7.5nC @ 10V 133pF @ 25V 10V ±20V
BUZ73L
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RFQ
38,400
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Infineon Technologies MOSFET N-CH 200V 7A TO-220AB SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 40W (Tc) N-Channel - 200V 7A (Tc) 400 mOhm @ 3.5A, 5V 2V @ 1mA - 840pF @ 25V 5V ±20V
BUZ73AL
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RFQ
37,920
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Infineon Technologies MOSFET N-CH 200V 5.5A TO-220AB SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 40W (Tc) N-Channel - 200V 5.5A (Tc) 600 mOhm @ 3.5A, 5V 2V @ 1mA - 840pF @ 25V 5V ±20V
BUZ73AE3046XK
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RFQ
56,960
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Infineon Technologies MOSFET N-CH 200V 5.5A TO-220 SIPMOS® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 40W (Tc) N-Channel - 200V 5.5A (Tc) 600 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V
BUZ73A
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RFQ
13,400
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Infineon Technologies MOSFET N-CH 200V 5.5A TO-220AB SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 40W (Tc) N-Channel - 200V 5.5A (Tc) 600 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V
BUZ73E3046XK
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RFQ
47,740
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Infineon Technologies MOSFET N-CH 200V 7A TO-220AB SIPMOS® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 40W (Tc) N-Channel - 200V 7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V
BTS113AE3064NKSA1
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RFQ
33,440
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Infineon Technologies MOSFET N-CH 60V 11.5A TO-220AB TEMPFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 P-TO220AB 40W (Tc) N-Channel - 60V 11.5A (Tc) 170 mOhm @ 5.8A, 4.5V 2.5V @ 1mA - 560pF @ 25V 4.5V ±10V
BTS113ANKSA1
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RFQ
71,260
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Infineon Technologies MOSFET N-CH 60V 11.5A TO-220AB TEMPFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 P-TO220AB 40W (Tc) N-Channel - 60V 11.5A (Tc) 170 mOhm @ 5.8A, 4.5V 2.5V @ 1mA - 560pF @ 25V 4.5V ±10V
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