Rds On (Max) @ Id, Vgs :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
344 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
ATP216-TL-H
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RFQ
42,700
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ON Semiconductor MOSFET N-CH 50V 35A ATPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount ATPAK (2 leads+tab) ATPAK 40W (Tc) N-Channel - 50V 35A (Ta) 23 mOhm @ 18A, 4.5V - 30nC @ 4.5V 2700pF @ 20V 1.8V, 4.5V ±10V
TSM8N70CI C0G
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RFQ
62,780
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 700V 8A ITO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 40W (Tc) N-Channel - 700V 8A (Tc) 900 mOhm @ 4A, 10V 4V @ 250µA 32nC @ 10V 2006pF @ 25V 10V ±30V
TSM7N65ACI C0G
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RFQ
39,000
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 650V 7A ITO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 40W (Tc) N-Channel - 650V 7A (Tc) 1.45 Ohm @ 3A, 10V 4V @ 250µA 27.8nC @ 10V 1406pF @ 25V 10V ±30V
TSM6NB60CZ C0G
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RFQ
48,520
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 6A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 40W (Tc) N-Channel - 600V 6A (Tc) 1.6 Ohm @ 3A, 10V 4.5V @ 250µA 18.3nC @ 10V 872pF @ 25V 10V ±30V
TSM4NC60CI C0G
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RFQ
41,700
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 4A ITO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 40W (Tc) N-Channel - 600V 4A (Tc) 2.5 Ohm @ 1.3A, 10V 4V @ 250µA 18nC @ 10V 654pF @ 50V 10V ±30V
IRLR3715ZCTRLP
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RFQ
33,200
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Infineon Technologies MOSFET N-CH 20V 49A DPAK HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 40W (Tc) N-Channel - 20V 49A (Tc) 11 mOhm @ 15A, 10V 2.55V @ 250µA 11nC @ 4.5V 810pF @ 10V 4.5V, 10V ±20V
IRLR3715ZCTRLP
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RFQ
74,320
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Infineon Technologies MOSFET N-CH 20V 49A DPAK HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 40W (Tc) N-Channel - 20V 49A (Tc) 11 mOhm @ 15A, 10V 2.55V @ 250µA 11nC @ 4.5V 810pF @ 10V 4.5V, 10V ±20V
TK15A60U(STA4,Q,M)
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RFQ
21,160
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 15A TO-220SIS DTMOSII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel - 600V 15A (Ta) 300 mOhm @ 7.5A, 10V 5V @ 1mA 17nC @ 10V 950pF @ 10V 10V ±30V
TK16A60W5,S4VX
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RFQ
77,200
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Toshiba Semiconductor and Storage MOSFET N CH 600V 15.8A TO-220SIS DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel Super Junction 600V 15.8A (Ta) 190 mOhm @ 7.9A, 10V 3.7V @ 1.5mA 43nC @ 10V 1350pF @ 300V 10V ±30V
SIHF8N50L-E3
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RFQ
58,400
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Vishay Siliconix MOSFET N-CH 500V 8A TO220FP - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 40W (Tc) N-Channel - 500V 8A (Tc) 1 Ohm @ 4A, 10V 5V @ 250µA - 873pF @ 25V 10V ±30V
BUZ73LHXKSA1
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RFQ
69,340
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Infineon Technologies MOSFET N-CH 200V 7A TO220-3 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 40W (Tc) N-Channel - 200V 7A (Tc) 400 mOhm @ 3.5A, 5V 2V @ 1mA - 840pF @ 25V 5V ±20V
BUZ73ALHXKSA1
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RFQ
39,160
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Infineon Technologies MOSFET N-CH 200V 5.5A TO220-3 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 40W (Tc) N-Channel - 200V 5.5A (Tc) 600 mOhm @ 3.5A, 5V 2V @ 1mA - 840pF @ 25V 5V ±20V
BUZ73A H3046
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RFQ
34,980
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Infineon Technologies MOSFET N-CH 200V 5.5A TO220-3 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 40W (Tc) N-Channel - 200V 5.5A (Tc) 600 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V
BUZ73A H
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RFQ
27,900
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Infineon Technologies MOSFET N-CH 200V 5.5A TO220-3 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 40W (Tc) N-Channel - 200V 5.5A (Tc) 600 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V
BUZ73H3046XKSA1
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RFQ
36,280
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Infineon Technologies MOSFET N-CH 200V 5.5A TO220-3 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 40W (Tc) N-Channel - 200V 7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V
BUZ73HXKSA1
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RFQ
22,900
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Infineon Technologies MOSFET N-CH 200V 7A TO220-3 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 40W (Tc) N-Channel - 200V 7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V
RJK0353DPA-01#J0B
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RFQ
34,140
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Renesas Electronics America MOSFET N-CH 30V 35A 2WPACK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerWDFN 8-WPAK 40W (Tc) N-Channel - 30V 35A (Ta) 5.2 mOhm @ 17.5A, 10V 2.5V @ 1mA 14nC @ 4.5V 2180pF @ 10V 4.5V, 10V ±20V
FQPF5N60
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RFQ
60,660
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ON Semiconductor MOSFET N-CH 600V 2.8A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 40W (Tc) N-Channel - 600V 2.8A (Tc) 2 Ohm @ 1.4A, 10V 5V @ 250µA 20nC @ 10V 730pF @ 25V 10V ±30V
FQPF18N20V2
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RFQ
36,760
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ON Semiconductor MOSFET N-CH 200V 18A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 40W (Tc) N-Channel - 200V 18A (Tc) 140 mOhm @ 9A, 10V 5V @ 250µA 26nC @ 10V 1080pF @ 25V 10V ±30V
FQPF6N60C
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RFQ
49,160
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ON Semiconductor MOSFET N-CH 600V 5.5A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 40W (Tc) N-Channel - 600V 5.5A (Tc) 2 Ohm @ 2.75A, 10V 4V @ 250µA 20nC @ 10V 810pF @ 25V 10V ±30V
2SK3566(STA4,Q,M)
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RFQ
79,540
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Toshiba Semiconductor and Storage MOSFET N-CH 900V 2.5A TO-220SIS π-MOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel - 900V 2.5A (Ta) 6.4 Ohm @ 1.5A, 10V 4V @ 1mA 12nC @ 10V 470pF @ 25V 10V ±30V
2SK3564(STA4,Q,M)
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RFQ
19,340
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Toshiba Semiconductor and Storage MOSFET N-CH 900V 3A TO-220SIS π-MOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel - 900V 3A (Ta) 4.3 Ohm @ 1.5A, 10V 4V @ 1mA 17nC @ 10V 700pF @ 25V 10V ±30V
IRLR3715ZTRLPBF
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RFQ
77,140
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Infineon Technologies MOSFET N-CH 20V 49A DPAK HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 40W (Tc) N-Channel - 20V 49A (Tc) 11 mOhm @ 15A, 10V 2.55V @ 250µA 11nC @ 4.5V 810pF @ 10V 4.5V, 10V ±20V
IRLR3715ZPBF
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RFQ
55,940
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Infineon Technologies MOSFET N-CH 20V 49A DPAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 40W (Tc) N-Channel - 20V 49A (Tc) 11 mOhm @ 15A, 10V 2.55V @ 250µA 11nC @ 4.5V 810pF @ 10V 4.5V, 10V ±20V
RDN120N25FU6
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RFQ
46,020
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Rohm Semiconductor MOSFET N-CH 250V 12A TO-220FN - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FN 40W (Tc) N-Channel - 250V 12A (Ta) 210 mOhm @ 6A, 10V 4V @ 1mA 62nC @ 10V 1224pF @ 10V 10V ±30V
NTD5806NT4G
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RFQ
31,320
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ON Semiconductor MOSFET N-CH 40V 33A DPAK - Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 40W (Tc) N-Channel - 40V 33A (Tc) 19 mOhm @ 15A, 10V 2.5V @ 250µA 38nC @ 10V 860pF @ 25V 4.5V, 10V ±20V
NTD5806NT4G
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RFQ
30,000
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ON Semiconductor MOSFET N-CH 40V 33A DPAK - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 40W (Tc) N-Channel - 40V 33A (Tc) 19 mOhm @ 15A, 10V 2.5V @ 250µA 38nC @ 10V 860pF @ 25V 4.5V, 10V ±20V
NTD5806NT4G
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RFQ
44,920
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ON Semiconductor MOSFET N-CH 40V 33A DPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 40W (Tc) N-Channel - 40V 33A (Tc) 19 mOhm @ 15A, 10V 2.5V @ 250µA 38nC @ 10V 860pF @ 25V 4.5V, 10V ±20V
2SK3313(Q)
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RFQ
20,860
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Toshiba Semiconductor and Storage MOSFET N-CH 500V 12A TO220NIS - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220NIS 40W (Tc) N-Channel - 500V 12A (Ta) 620 mOhm @ 6A, 10V 4V @ 1mA 45nC @ 10V 2040pF @ 10V 10V ±30V
2SK2845(TE16L1,Q)
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RFQ
62,040
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Toshiba Semiconductor and Storage MOSFET N-CH 900V 1A DP - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DP 40W (Tc) N-Channel - 900V 1A (Ta) 9 Ohm @ 500mA, 10V 4V @ 1mA 15nC @ 10V 350pF @ 25V 10V ±30V
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