2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TSM6NB60CZ C0G
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RFQ
48,520
One step to sell excess stocks.Or submit Qty to get quotes
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 6A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 40W (Tc) N-Channel 600V 6A (Tc) 1.6 Ohm @ 3A, 10V 4.5V @ 250µA 18.3nC @ 10V 872pF @ 25V 10V ±30V
TSM6NB60CI C0G
Per Unit
$0.93
RFQ
77,000
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 6A ITO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 40W (Tc) N-Channel 600V 6A (Tc) 1.6 Ohm @ 3A, 10V 4.5V @ 250µA 18.3nC @ 10V 872pF @ 25V 10V ±30V
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