- Series :
- Part Status :
- Technology :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.3 Ohm @ 4.5A, 10V (1)
- 104 mOhm @ 10A, 18V (1)
- 155 mOhm @ 10A, 10V (3)
- 156 mOhm @ 10A, 18V (1)
- 175 mOhm @ 10A, 10V (1)
- 200 mOhm @ 8.7A, 10V (2)
- 208 mOhm @ 7A, 18V (1)
- 4 mOhm @ 20A, 10V (1)
- 4.8 mOhm @ 69A, 10V (2)
- 450 mOhm @ 5.8A, 10V (1)
- 5.4 mOhm @ 63A, 10V (2)
- 51 mOhm @ 18A, 10V (1)
- 650 mOhm @ 6A, 10V (1)
- 78 mOhm @ 13A, 18V (1)
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
19 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
74,160
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|
ON Semiconductor | MOSFET N-CH 280V 36A TO-3PF | UniFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | SC-94 | TO-3PF | 165W (Tc) | N-Channel | - | 280V | 36A (Tc) | 51 mOhm @ 18A, 10V | 5V @ 250µA | 100nC @ 10V | 4630pF @ 25V | 10V | ±30V | ||
|
|
GET PRICE |
13,040
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|
Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 165W (Tc) | N-Channel | - | 55V | 80A (Tc) | 4.8 mOhm @ 69A, 10V | 2.2V @ 115µA | 273nC @ 10V | 13060pF @ 25V | 5V, 10V | ±16V | ||
|
|
|
GET PRICE |
71,000
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|
Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 165W (Tc) | N-Channel | - | 55V | 80A (Tc) | 5.4 mOhm @ 63A, 10V | 4V @ 110µA | 240nC @ 10V | 10760pF @ 25V | 10V | ±20V | ||
|
|
GET PRICE |
38,200
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|
Infineon Technologies | MOSFET N-CH 55V 80A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 165W (Tc) | N-Channel | - | 55V | 80A (Tc) | 4.8 mOhm @ 69A, 10V | 2.2V @ 115µA | 273nC @ 10V | 13060pF @ 25V | 5V, 10V | ±16V | ||
|
|
|
GET PRICE |
61,160
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 55V 80A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 165W (Tc) | N-Channel | - | 55V | 80A (Tc) | 5.4 mOhm @ 63A, 10V | 4V @ 110µA | 240nC @ 10V | 10760pF @ 25V | 10V | ±20V | ||
|
|
63,760
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
|
21,240
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|
Diodes Incorporated | MOSFET N-CH 40V 150A TO220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 165W (Tc) | N-Channel | - | 40V | 150A (Tc) | 4 mOhm @ 20A, 10V | 3V @ 250µA | 48nC @ 10V | 2846pF @ 20V | 10V | 20V | |||
|
|
35,920
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
|
|
30,280
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|
Diodes Incorporated | MOSFET N-CH 650V 9A TO220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 165W (Tc) | N-Channel | - | 650V | 9A (Tc) | 1.3 Ohm @ 4.5A, 10V | 5V @ 250µA | 39nC @ 10V | 2310pF @ 25V | 10V | ±30V | |||
|
|
|
25,480
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|
Rohm Semiconductor | MOSFET N-CH 650V 29A TO-220AB | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 165W (Tc) | N-Channel | - | 650V | 29A (Tc) | 156 mOhm @ 10A, 18V | 4V @ 3.3mA | 61nC @ 18V | 1200pF @ 500V | 18V | +22V, -6V | |||
|
|
50,900
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|
Rohm Semiconductor | MOSFET NCH 1.2KV 31A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 165W (Tc) | N-Channel | - | 1200V | 31A (Tc) | 104 mOhm @ 10A, 18V | 5.6V @ 5mA | 60nC @ 18V | 785pF @ 800V | 18V | +22V, -4V | |||
|
|
|
18,880
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|
Rohm Semiconductor | MOSFET NCH 650V 39A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 165W (Tc) | N-Channel | - | 650V | 39A (Tc) | 78 mOhm @ 13A, 18V | 5.6V @ 6.67mA | 58nC @ 18V | 852pF @ 500V | 18V | +22V, -4V | |||
|
|
28,180
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|
ON Semiconductor | MOSFET N-CH 500V 11.5A TO-220 | UniFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 165W (Tc) | N-Channel | - | 500V | 11.5A (Tc) | 650 mOhm @ 6A, 10V | 5V @ 250µA | 30nC @ 10V | 1315pF @ 25V | 10V | ±30V | |||
|
|
16,140
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A I2PAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
|
|
46,740
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 17.3A TO-220AB | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 165W (Tc) | N-Channel | - | 650V | 17.3A (Ta) | 200 mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45nC @ 10V | 1800pF @ 300V | 10V | ±30V | |||
|
|
|
52,360
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 175 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | |||
|
|
|
50,720
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 17.3A T0247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | - | 650V | 17.3A (Ta) | 200 mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45nC @ 10V | 1800pF @ 300V | 10V | ±30V | |||
|
|
|
37,440
One step to sell excess stocks.Or submit Qty to get quotes
|
Rohm Semiconductor | MOSFET N-CH 1200V 22A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | - | 1200V | 22A (Tc) | 208 mOhm @ 7A, 18V | 4V @ 2.5mA | 62nC @ 18V | 1200pF @ 800V | 18V | +22V, -6V | |||
|
|
|
17,940
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 800V 11.5A TO220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 | TO-220 | 165W (Tc) | N-Channel | - | 800V | 11.5A (Ta) | 450 mOhm @ 5.8A, 10V | 4V @ 570µA | 23nC @ 10V | 1400pF @ 300V | 10V | ±20V |
