- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Package / Case :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
16 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
48,760
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 0.65A 5-DFN | aMOS™ | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | 4-DFN-EP (8x8) | 8.3W (Ta), 156W (Tc) | N-Channel | - | 600V | 650mA (Ta), 8A (Tc) | 500 mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11nC @ 10V | 545pF @ 100V | 10V | ±30V | ||
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GET PRICE |
21,040
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 0.65A 5-DFN | aMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | 4-DFN-EP (8x8) | 8.3W (Ta), 156W (Tc) | N-Channel | - | 600V | 650mA (Ta), 8A (Tc) | 500 mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11nC @ 10V | 545pF @ 100V | 10V | ±30V | ||
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77,220
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 0.65A 5-DFN | aMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | 4-DFN-EP (8x8) | 8.3W (Ta), 156W (Tc) | N-Channel | - | 600V | 650mA (Ta), 8A (Tc) | 500 mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11nC @ 10V | 545pF @ 100V | 10V | ±30V | |||
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GET PRICE |
40,560
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 18A 5DFB | aMOS™ | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | 4-DFN-EP (8x8) | 8.3W (Ta), 278W (Tc) | N-Channel | - | 600V | 3.6A (Ta), 18A (Tc) | 250 mOhm @ 10A, 10V | 4.1V @ 250µA | 20nC @ 10V | 1038pF @ 100V | 10V | ±30V | ||
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|
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GET PRICE |
40,340
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 18A 5DFB | aMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | 4-DFN-EP (8x8) | 8.3W (Ta), 278W (Tc) | N-Channel | - | 600V | 3.6A (Ta), 18A (Tc) | 250 mOhm @ 10A, 10V | 4.1V @ 250µA | 20nC @ 10V | 1038pF @ 100V | 10V | ±30V | ||
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|
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23,320
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 18A 5DFB | aMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | 4-DFN-EP (8x8) | 8.3W (Ta), 278W (Tc) | N-Channel | - | 600V | 3.6A (Ta), 18A (Tc) | 250 mOhm @ 10A, 10V | 4.1V @ 250µA | 20nC @ 10V | 1038pF @ 100V | 10V | ±30V | |||
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|
49,820
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|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | DTMOSIV-H | Active | - | MOSFET (Metal Oxide) | 150°C | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 180W (Tc) | N-Channel | - | 600V | 25A (Ta) | 135 mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | 2400pF @ 300V | 10V | ±30V | |||
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52,880
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 0.52A 5-DFN | aMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | 4-DFN-EP (8x8) | 8.3W (Ta), 208W (Tc) | N-Channel | - | 600V | 520mA (Ta), 12A (Tc) | 360 mOhm @ 7.5A, 10V | 3.8V @ 250µA | 15.6nC @ 10V | 717pF @ 100V | 10V | ±30V | |||
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|
|
GET PRICE |
35,560
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 0.52A 5-DFN | aMOS™ | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | 4-DFN-EP (8x8) | 8.3W (Ta), 208W (Tc) | N-Channel | - | 600V | 520mA (Ta), 12A (Tc) | 360 mOhm @ 7.5A, 10V | 3.8V @ 250µA | 15.6nC @ 10V | 717pF @ 100V | 10V | ±30V | ||
|
|
|
GET PRICE |
21,140
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 0.52A 5-DFN | aMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | 4-DFN-EP (8x8) | 8.3W (Ta), 208W (Tc) | N-Channel | - | 600V | 520mA (Ta), 12A (Tc) | 360 mOhm @ 7.5A, 10V | 3.8V @ 250µA | 15.6nC @ 10V | 717pF @ 100V | 10V | ±30V | ||
|
|
GET PRICE |
59,480
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A 5DFN | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | - | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | ||
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|
|
76,300
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A 5DFN | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | - | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | |||
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|
|
44,240
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A 5DFN | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | - | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | |||
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|
|
GET PRICE |
61,380
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|
Toshiba Semiconductor and Storage | MOSFET N -CH 600V 30.8A DFN | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 240W (Tc) | N-Channel | - | 600V | 30.8A (Ta) | 109 mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105nC @ 10V | 3000pF @ 300V | 10V | ±30V | ||
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|
|
66,540
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N -CH 600V 30.8A DFN | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 240W (Tc) | N-Channel | - | 600V | 30.8A (Ta) | 109 mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
|
|
58,100
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N -CH 600V 30.8A DFN | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 240W (Tc) | N-Channel | - | 600V | 30.8A (Ta) | 109 mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105nC @ 10V | 3000pF @ 300V | 10V | ±30V |
