1 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
49,820
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | DTMOSIV-H | Active | - | MOSFET (Metal Oxide) | 150°C | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 180W (Tc) | N-Channel | 600V | 25A (Ta) | 135 mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | 2400pF @ 300V | 10V | ±30V |