- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
33,680
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|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 11A 8SOP | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | P-Channel | 30V | 11A (Ta) | 10 mOhm @ 5.5A, 10V | 2V @ 500µA | 56nC @ 10V | 2400pF @ 10V | 4.5V, 10V | +20V, -25V | ||
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48,200
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|
Renesas Electronics America | MOSFET P-CH 30V 11A 8SOP | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP | 1.1W (Ta) | P-Channel | 30V | 11A (Ta) | 13 mOhm @ 11A, 10V | - | 45nC @ 10V | 1750pF @ 10V | 4.5V, 10V | ±20V | |||
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GET PRICE |
39,500
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|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 11A SOP8 2-6J1B | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | P-Channel | 30V | 11A (Ta) | 10 mOhm @ 5.5A, 10V | 2V @ 1mA | 107nC @ 10V | 4500pF @ 10V | 4V, 10V | ±20V | ||
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GET PRICE |
37,200
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|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 11A SOP8 2-6J1B | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | P-Channel | 30V | 11A (Ta) | 12 mOhm @ 5.5A, 10V | 2V @ 1mA | 107nC @ 10V | 5710pF @ 10V | 4V, 10V | ±20V | ||
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GET PRICE |
27,500
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 11A SOP8 2-6J1B | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | - | N-Channel | 30V | 11A (Ta) | 13.3 mOhm @ 5.5A, 10V | 2.5V @ 1mA | 21nC @ 10V | 2150pF @ 10V | - | - | ||
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GET PRICE |
44,280
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 11A SOP8 2-6J1B | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | N-Channel | 30V | 11A (Ta) | 17 mOhm @ 5.5A, 10V | 2.3V @ 1mA | 11nC @ 10V | 640pF @ 10V | 4.5V, 10V | ±20V | ||
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GET PRICE |
17,780
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 11A SOP8 2-6J1B | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | N-Channel | 30V | 11A (Ta) | 14 mOhm @ 5.5A, 10V | 2.5V @ 1mA | 39nC @ 10V | 1860pF @ 10V | 4.5V, 10V | ±20V |
