Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TPC8126,LQ(CM
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RFQ
33,680
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Toshiba Semiconductor and Storage MOSFET P-CH 30V 11A 8SOP U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP (5.5x6.0) 1W (Ta) P-Channel 30V 11A (Ta) 10 mOhm @ 5.5A, 10V 2V @ 500µA 56nC @ 10V 2400pF @ 10V 4.5V, 10V +20V, -25V
TPC8113(TE12L,Q)
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RFQ
39,500
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Toshiba Semiconductor and Storage MOSFET P-CH 30V 11A SOP8 2-6J1B - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP (5.5x6.0) 1W (Ta) P-Channel 30V 11A (Ta) 10 mOhm @ 5.5A, 10V 2V @ 1mA 107nC @ 10V 4500pF @ 10V 4V, 10V ±20V
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