- Part Status :
- Packaging :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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25 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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32,960
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 9A 8TSON-ADV | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 15W (Tc) | N-Channel | - | 30V | 9A (Ta) | 25 mOhm @ 4.5A, 10V | 2.3V @ 100µA | 9.5nC @ 10V | 690pF @ 10V | 4.5V, 10V | ±20V | ||
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20,580
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 11A 8TSON-ADV | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 17W (Tc) | N-Channel | - | 30V | 11A (Ta) | 15 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 15nC @ 10V | 1100pF @ 10V | 4.5V, 10V | ±20V | ||
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65,000
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 6.1A VS6 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 60V | 6.1A (Ta) | 59 mOhm @ 3.1A, 10V | 2.3V @ 100µA | 12nC @ 10V | 830pF @ 10V | 4.5V, 10V | ±20V | ||
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27,620
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 5.3A VS6 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 40V | 5.3A (Ta) | 81 mOhm @ 2.7A, 10V | 2.3V @ 100µA | 4.7nC @ 10V | 290pF @ 10V | 4.5V, 10V | ±20V | ||
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33,680
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 5.9A VS6 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 30V | 5.9A (Ta) | 60 mOhm @ 3A, 10V | 2.3V @ 100µA | 4.8nC @ 10V | 300pF @ 10V | 4.5V, 10V | ±20V | ||
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22,200
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 40A DPAK-3 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | - | N-Channel | - | 30V | 40A (Ta) | 10.8 mOhm @ 20A, 10V | 2.3V @ 100µA | 17.5nC @ 10V | 1150pF @ 10V | 4.5V, 10V | ±20V | ||
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56,580
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 40A 3DP 2-7K1A | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | - | N-Channel | - | 30V | 40A (Ta) | 10.8 mOhm @ 20A, 10V | 2.3V @ 100µA | 17.5nC @ 10V | 1150pF @ 10V | 4.5V, 10V | ±20V | ||
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34,620
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 1.2A UFM | π-MOSVI | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | - | 20V | 1.2A (Ta) | 310 mOhm @ 600mA, 10V | 2.3V @ 100µA | - | 36pF @ 10V | 4V, 10V | ±20V | ||
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GET PRICE |
68,660
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 1.2A UFM | π-MOSVI | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | - | 20V | 1.2A (Ta) | 310 mOhm @ 600mA, 10V | 2.3V @ 100µA | - | 36pF @ 10V | 4V, 10V | ±20V | ||
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GET PRICE |
65,820
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 1.2A UFM | π-MOSVI | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | - | 20V | 1.2A (Ta) | 310 mOhm @ 600mA, 10V | 2.3V @ 100µA | - | 36pF @ 10V | 4V, 10V | ±20V | ||
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33,760
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 9A 8SOP | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1W (Ta) | N-Channel | - | 30V | 9A (Ta) | 25 mOhm @ 4.5A, 10V | 2.3V @ 100µA | 9.5nC @ 10V | 690pF @ 10V | 4.5V, 10V | ±20V | |||
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GET PRICE |
44,780
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|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 15A 8SOP | U-MOSVIII-H | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1W (Tc) | N-Channel | - | 30V | 15A (Tc) | 9.1 mOhm @ 7.5A, 10V | 2.3V @ 100µA | 9.8nC @ 10V | 820pF @ 15V | 4.5V, 10V | ±20V | ||
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GET PRICE |
46,920
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|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 15A 8SOP | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1W (Tc) | N-Channel | - | 30V | 15A (Tc) | 9.1 mOhm @ 7.5A, 10V | 2.3V @ 100µA | 9.8nC @ 10V | 820pF @ 15V | 4.5V, 10V | ±20V | ||
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73,840
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|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 15A 8SOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1W (Tc) | N-Channel | - | 30V | 15A (Tc) | 9.1 mOhm @ 7.5A, 10V | 2.3V @ 100µA | 9.8nC @ 10V | 820pF @ 15V | 4.5V, 10V | ±20V | |||
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45,220
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 20A DPAK-3 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 27W (Tc) | N-Channel | - | 40V | 20A (Ta) | 29 mOhm @ 10A, 10V | 2.3V @ 100µA | 15nC @ 10V | 985pF @ 10V | 4.5V, 10V | ±20V | |||
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|
79,480
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 11A 8SOP | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1W (Ta) | N-Channel | - | 30V | 11A (Ta) | 16 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 15nC @ 10V | 1100pF @ 10V | 4.5V, 10V | ±20V | |||
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GET PRICE |
63,800
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|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 11A 8TSON-ADV | U-MOSVIII-H | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 19W (Tc) | N-Channel | - | 30V | 11A (Tc) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | ||
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79,300
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|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 11A 8TSON-ADV | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 19W (Tc) | N-Channel | - | 30V | 11A (Tc) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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|
16,240
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|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 11A 8TSON-ADV | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 19W (Tc) | N-Channel | - | 30V | 11A (Tc) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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GET PRICE |
61,800
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 20A TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 20A (Tc) | 8.9 mOhm @ 10A, 10V | 2.3V @ 100µA | 9.8nC @ 4.5V | 820pF @ 15V | 4.5V, 10V | ±20V | ||
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|
77,960
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 20A TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 20A (Tc) | 8.9 mOhm @ 10A, 10V | 2.3V @ 100µA | 9.8nC @ 4.5V | 820pF @ 15V | 4.5V, 10V | ±20V | |||
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14,660
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 20A TSON | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 20A (Tc) | 8.9 mOhm @ 10A, 10V | 2.3V @ 100µA | 9.8nC @ 4.5V | 820pF @ 15V | 4.5V, 10V | ±20V | |||
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GET PRICE |
43,860
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|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 32A 8SOP | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 21W (Tc) | N-Channel | - | 30V | 32A (Ta) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | ||
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69,680
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 32A 8SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 21W (Tc) | N-Channel | - | 30V | 32A (Ta) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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|
29,500
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|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 32A 8SOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 21W (Tc) | N-Channel | - | 30V | 32A (Ta) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V |
