2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
32,960
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 9A 8TSON-ADV U-MOSVII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 15W (Tc) N-Channel - 30V 9A (Ta) 25 mOhm @ 4.5A, 10V 2.3V @ 100µA 9.5nC @ 10V 690pF @ 10V 4.5V, 10V ±20V
TPC8067-H,LQ(S
Per Unit
$0.15
RFQ
33,760
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 9A 8SOP U-MOSVII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOP 1W (Ta) N-Channel - 30V 9A (Ta) 25 mOhm @ 4.5A, 10V 2.3V @ 100µA 9.5nC @ 10V 690pF @ 10V 4.5V, 10V ±20V
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