- Part Status :
- Operating Temperature :
- Mounting Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.1 mOhm @ 100A, 10V (3)
- 1.5 mOhm @ 100A, 10V (4)
- 1.7 mOhm @ 100A, 10V (2)
- 114 mOhm @ 3.6A, 10V (6)
- 13.3 mOhm @ 9A, 10V (3)
- 14 mOhm @ 6.5A, 10V (3)
- 14 mOhm @ 7A, 10V (3)
- 15 mOhm @ 15A, 10V (2)
- 16 mOhm @ 8.5A, 10V (3)
- 198 mOhm @ 2.8A, 10V (6)
- 2.1 mOhm @ 100A, 10V (1)
- 2.4 mOhm @ 100A, 10V (5)
- 4.8 mOhm @ 70A, 10V (1)
- 50 mOhm @ 2A, 10V (1)
- 59 mOhm @ 4.5A, 10V (6)
- 6.5 mOhm @ 50A, 10V (1)
- 7.5 mOhm @ 13A, 10V (3)
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
53 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
19,300
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|
Infineon Technologies | MOSFET N-CH TO262-3 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 250W (Tc) | N-Channel | - | 60V | 120A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | 21900pF @ 25V | 10V | ±20V | ||
|
|
GET PRICE |
43,060
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|
Infineon Technologies | MOSFET N-CH 60V 120A TO220-3 | OptiMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 250W (Tc) | N-Channel | - | 60V | 120A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | 21900pF @ 25V | 10V | ±20V | ||
|
|
|
GET PRICE |
44,700
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|
Infineon Technologies | MOSFET N-CH 40V 50A TO220-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 68W (Tc) | N-Channel | - | 40V | 50A (Tc) | 6.5 mOhm @ 50A, 10V | 4V @ 200µA | 34nC @ 10V | 2800pF @ 20V | 10V | ±20V | ||
|
|
|
GET PRICE |
22,860
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|
Infineon Technologies | MOSFET N-CH 60V 120A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 250W (Tc) | N-Channel | - | 60V | 120A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | 21900pF @ 25V | 10V | ±20V | ||
|
|
GET PRICE |
55,300
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|
Infineon Technologies | MOSFET N-CH 60V 180A TO263-7 | OptiMOS™ | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7-3 | 250W (Tc) | N-Channel | - | 60V | 180A (Tc) | 1.7 mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | 21900pF @ 25V | 10V | ±20V | ||
|
|
GET PRICE |
34,460
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|
Infineon Technologies | MOSFET N-CH 60V 120A TO263-3 | OptiMOS™ | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 250W (Tc) | N-Channel | - | 60V | 120A (Tc) | 2.1 mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | 21900pF @ 25V | 10V | ±20V | ||
|
|
|
55,380
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|
Infineon Technologies | MOSFET N-CH 60V 120A TO220-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 250W (Tc) | N-Channel | - | 60V | 120A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | 21900pF @ 25V | 10V | ±20V | |||
|
|
|
72,380
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 60V 180A TO263-7 | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | PG-TO263-7-3 | 250W (Tc) | N-Channel | - | 60V | 180A (Tc) | 1.7 mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | 21900pF @ 25V | 10V | ±20V | |||
|
|
34,800
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|
Infineon Technologies | MOSFET N-CH 40V 2A SAWN ON FOIL | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | - | Surface Mount | Die | Sawn on foil | - | N-Channel | - | 40V | 2A (Tj) | 50 mOhm @ 2A, 10V | 4V @ 200µA | - | - | 10V | - | |||
|
|
GET PRICE |
37,440
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 250V 5.6A 8SOP | U-MOSVIII-H | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 42W (Tc) | N-Channel | - | 250V | 5.6A (Ta) | 198 mOhm @ 2.8A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | 10V | ±20V | ||
|
|
|
GET PRICE |
52,000
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 250V 5.6A 8SOP | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 42W (Tc) | N-Channel | - | 250V | 5.6A (Ta) | 198 mOhm @ 2.8A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | 10V | ±20V | ||
|
|
|
51,500
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 250V 5.6A 8SOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 42W (Tc) | N-Channel | - | 250V | 5.6A (Ta) | 198 mOhm @ 2.8A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | 10V | ±20V | |||
|
|
GET PRICE |
23,320
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|
Toshiba Semiconductor and Storage | MOSFET N CH 60V 13A 8TSON-ADV | U-MOSVIII-H | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 60V | 13A (Ta) | 14 mOhm @ 6.5A, 10V | 4V @ 200µA | 15nC @ 10V | 1300pF @ 30V | 6.5V, 10V | ±20V | ||
|
|
|
GET PRICE |
51,820
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N CH 60V 13A 8TSON-ADV | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 60V | 13A (Ta) | 14 mOhm @ 6.5A, 10V | 4V @ 200µA | 15nC @ 10V | 1300pF @ 30V | 6.5V, 10V | ±20V | ||
|
|
|
64,580
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N CH 60V 13A 8TSON-ADV | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 60V | 13A (Ta) | 14 mOhm @ 6.5A, 10V | 4V @ 200µA | 15nC @ 10V | 1300pF @ 30V | 6.5V, 10V | ±20V | |||
|
|
|
13,920
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 60V 120A TO263-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 250W (Tc) | N-Channel | - | 60V | 120A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | 21900pF @ 25V | 10V | ±20V | |||
|
|
|
47,100
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 40V 70A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 79W (Tc) | N-Channel | - | 40V | 70A (Tc) | 4.8 mOhm @ 70A, 10V | 4V @ 200µA | 41nC @ 10V | 3300pF @ 25V | 10V | ±20V | |||
|
|
|
GET PRICE |
43,120
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 200V 7.2A 8SOP | U-MOSVIII-H | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 42W (Tc) | N-Channel | - | 200V | 7.2A (Ta) | 114 mOhm @ 3.6A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | 10V | ±20V | ||
|
|
|
GET PRICE |
30,380
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 200V 7.2A 8SOP | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 42W (Tc) | N-Channel | - | 200V | 7.2A (Ta) | 114 mOhm @ 3.6A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | 10V | ±20V | ||
|
|
|
55,080
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 200V 7.2A 8SOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 42W (Tc) | N-Channel | - | 200V | 7.2A (Ta) | 114 mOhm @ 3.6A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | 10V | ±20V | |||
|
|
|
GET PRICE |
13,760
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 200V 7.2A 8TSON | U-MOSVIII-H | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 39W (Tc) | N-Channel | - | 200V | 7.2A (Ta) | 114 mOhm @ 3.6A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | 10V | ±20V | ||
|
|
|
GET PRICE |
17,340
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 200V 7.2A 8TSON | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 39W (Tc) | N-Channel | - | 200V | 7.2A (Ta) | 114 mOhm @ 3.6A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | 10V | ±20V | ||
|
|
|
32,420
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 200V 7.2A 8TSON | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 39W (Tc) | N-Channel | - | 200V | 7.2A (Ta) | 114 mOhm @ 3.6A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | 10V | ±20V | |||
|
|
|
GET PRICE |
52,920
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 150V 9A 8SOP | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 42W (Tc) | N-Channel | - | 150V | 9A (Ta) | 59 mOhm @ 4.5A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 75V | 10V | ±20V | ||
|
|
|
74,060
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 150V 9A 8SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 42W (Tc) | N-Channel | - | 150V | 9A (Ta) | 59 mOhm @ 4.5A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 75V | 10V | ±20V | |||
|
|
|
43,500
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 150V 9A 8SOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 42W (Tc) | N-Channel | - | 150V | 9A (Ta) | 59 mOhm @ 4.5A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 75V | 10V | ±20V | |||
|
|
|
GET PRICE |
41,620
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 150V 9A 8TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 39W (Tc) | N-Channel | - | 150V | 9A (Ta) | 59 mOhm @ 4.5A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 75V | 10V | ±20V | ||
|
|
|
74,980
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 150V 9A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 39W (Tc) | N-Channel | - | 150V | 9A (Ta) | 59 mOhm @ 4.5A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 75V | 10V | ±20V | |||
|
|
|
23,740
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 150V 9A 8TSON | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 39W (Tc) | N-Channel | - | 150V | 9A (Ta) | 59 mOhm @ 4.5A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 75V | 10V | ±20V | |||
|
|
36,780
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 43A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 53W (Tc) | N-Channel | - | 60V | 43A (Ta) | 15 mOhm @ 15A, 10V | 4V @ 200µA | 16nC @ 10V | 1050pF @ 30V | 10V | ±20V |
