4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPP015N04NGXKSA1
Per Unit
$2.17
RFQ
26,840
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Infineon Technologies MOSFET N-CH 40V 120A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 250W (Tc) N-Channel - 40V 120A (Tc) 1.5 mOhm @ 100A, 10V 4V @ 200µA 250nC @ 10V 20000pF @ 20V 10V ±20V
IPB015N04NGATMA1
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RFQ
62,000
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Infineon Technologies MOSFET N-CH 40V 120A TO263-3 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 250W (Tc) N-Channel - 40V 120A (Tc) 1.5 mOhm @ 100A, 10V 4V @ 200µA 250nC @ 10V 20000pF @ 20V 10V ±20V
IPB015N04NGATMA1
Per Unit
$2.23
RFQ
43,460
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Infineon Technologies MOSFET N-CH 40V 120A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 250W (Tc) N-Channel - 40V 120A (Tc) 1.5 mOhm @ 100A, 10V 4V @ 200µA 250nC @ 10V 20000pF @ 20V 10V ±20V
IPB015N04NGATMA1
Per Unit
$1.08
RFQ
30,180
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 40V 120A TO263-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 250W (Tc) N-Channel - 40V 120A (Tc) 1.5 mOhm @ 100A, 10V 4V @ 200µA 250nC @ 10V 20000pF @ 20V 10V ±20V
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