- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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20,040
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Global Power Technologies Group | MOSFET N-CH 600V 7.5A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 120W (Tc) | N-Channel | - | 600V | 7.5A (Tc) | 1.2 Ohm @ 3.75A, 10V | 5V @ 250µA | 23nC @ 10V | 1063pF @ 25V | 10V | ±30V | ||
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12,240
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|
Global Power Technologies Group | MOSFET N-CH 600V 7.5A IPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 120W (Tc) | N-Channel | - | 600V | 7.5A (Tc) | 1.2 Ohm @ 3.75A, 10V | 5V @ 250µA | 23nC @ 10V | 1063pF @ 25V | 10V | ±30V | ||
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36,880
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|
Infineon Technologies | MOSFET N-CH 800V 3.9A TO251-3 | CoolMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 63W (Tc) | N-Channel | - | 800V | 3.9A (Tc) | 1.4 Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23nC @ 10V | 570pF @ 100V | 10V | ±20V | ||
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56,540
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|
ON Semiconductor | MOSFET P-CH 500V 2.1A IPAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 50W (Tc) | P-Channel | - | 500V | 2.1A (Tc) | 4.9 Ohm @ 1.05A, 10V | 5V @ 250µA | 23nC @ 10V | 660pF @ 25V | 10V | ±30V | ||
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18,800
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|
Infineon Technologies | MOSFET N-CH 200V 5A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 43W (Tc) | N-Channel | - | 200V | 5A (Tc) | 600 mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | 300pF @ 25V | 10V | ±20V | ||
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29,140
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|
Infineon Technologies | MOSFET N-CH 800V TO251-3 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 | 63W (Tc) | N-Channel | - | 800V | 3.9A (Tc) | 1.4 Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23nC @ 10V | 570pF @ 100V | 10V | ±20V | |||
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15,520
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|
Infineon Technologies | MOSFET N-CH 30V 50A TO-251-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 56W (Tc) | N-Channel | - | 30V | 50A (Tc) | 6 mOhm @ 30A, 10V | 2.2V @ 250µA | 23nC @ 10V | 2400pF @ 15V | 4.5V, 10V | ±20V | ||
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64,900
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|
ON Semiconductor | MOSFET N-CH 200V 9A IPAK | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 55W (Tc) | N-Channel | - | 200V | 9A (Tc) | 280 mOhm @ 4.5A, 10V | 5V @ 250µA | 23nC @ 10V | 910pF @ 25V | 10V | ±30V | |||
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78,300
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|
Infineon Technologies | MOSFET N-CH 200V 5A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 43W (Tc) | N-Channel | - | 200V | 5A (Tc) | 600 mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | 300pF @ 25V | 10V | ±20V |
