4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GP2M008A060PGH
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RFQ
20,040
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Global Power Technologies Group MOSFET N-CH 600V 7.5A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 120W (Tc) N-Channel - 600V 7.5A (Tc) 1.2 Ohm @ 3.75A, 10V 5V @ 250µA 23nC @ 10V 1063pF @ 25V 10V ±30V
GP2M008A060PG
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RFQ
12,240
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Global Power Technologies Group MOSFET N-CH 600V 7.5A IPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 120W (Tc) N-Channel - 600V 7.5A (Tc) 1.2 Ohm @ 3.75A, 10V 5V @ 250µA 23nC @ 10V 1063pF @ 25V 10V ±30V
FQU3P50TU
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RFQ
56,540
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ON Semiconductor MOSFET P-CH 500V 2.1A IPAK QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 2.5W (Ta), 50W (Tc) P-Channel - 500V 2.1A (Tc) 4.9 Ohm @ 1.05A, 10V 5V @ 250µA 23nC @ 10V 660pF @ 25V 10V ±30V
FQU12N20TU
Per Unit
$0.85
RFQ
64,900
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ON Semiconductor MOSFET N-CH 200V 9A IPAK QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 2.5W (Ta), 55W (Tc) N-Channel - 200V 9A (Tc) 280 mOhm @ 4.5A, 10V 5V @ 250µA 23nC @ 10V 910pF @ 25V 10V ±30V
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